ME70N10T-G
DESCRIPTION
The ME70N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
(TO-220) Top View
FEATURES
- RDS(ON)≦17mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management
- DC/DC Converter
- Load Switch
- The Ordering Information: ME70N10T (Pb-free) ME70N10T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25℃ TC=70℃
Pulsed Drain Current
Maximum Power Dissipation
TC=25℃ TC=70℃
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Case-
- The device mounted on...
