ME70N10T-G Datasheet PDF (N- Channel 100-V (D-S) MOSFET)

ME70N10T-G - N- Channel 100-V (D-S) MOSFET

This page provides the datasheet information for the ME70N10T-G, a member of the ME70N10T N- Channel 100-V (D-S) MOSFET family.

Description

The ME70N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON)≦17mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

Datasheet Details

Part number	ME70N10T-G
Manufacturer	Matsuki
File Size	948.51 KB
Description	N- Channel 100-V (D-S) MOSFET
Datasheet	ME70N10T-G Datasheet
Additional preview pages of the ME70N10T-G datasheet.

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Full PDF Text Transcription

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N- Channel 100-V (D-S) MOSFET ME70N10T / ME70N10T-G GENERAL DESCRIPTION The ME70N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Published: Mar 22, 2018 |