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ME70N10T - N- Channel 100-V (D-S) MOSFET

General Description

The ME70N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦17mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME70N10T
Manufacturer Matsuki
File Size 948.51 KB
Description N- Channel 100-V (D-S) MOSFET
Datasheet download datasheet ME70N10T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N- Channel 100-V (D-S) MOSFET ME70N10T / ME70N10T-G GENERAL DESCRIPTION The ME70N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.