ME7114AS-G
Description
The ME7114AS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Key Features
- RDS(ON)≦7mΩ@VGS=10V
- RDS(ON)≦10.5mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
