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ME7114AS - N-Channel MOSFET

General Description

The ME7114AS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦7mΩ@VGS=10V.
  • RDS(ON)≦10.5mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME7114AS
Manufacturer Matsuki
File Size 711.96 KB
Description N-Channel MOSFET
Datasheet download datasheet ME7114AS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel 30V(D-S) MOSFET ME7114AS/ME7114AS-G GENERAL DESCRIPTION The ME7114AS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (DFN(S) 3.3x3.3) Top View FEATURES ● RDS(ON)≦7mΩ@VGS=10V ● RDS(ON)≦10.5mΩ@VGS=4.