Datasheet4U Logo Datasheet4U.com

ME7642-G - N-Channel MOSFET

Download the ME7642-G datasheet PDF (ME7642 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel mosfet.

Description

The ME7642-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦4mΩ@VGS=10V.
  • RDS(ON)≦5.5mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME7642-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME7642-G
Manufacturer Matsuki
File Size 888.98 KB
Description N-Channel MOSFET
Datasheet download datasheet ME7642-G Datasheet

📁 Similar Datasheet

  • ME7660 - CHARGE PUMP DC-DC VOLTAGE CONVERTER (UTC)
  • ME7660 - Charge Pump DC-DC Voltage Converter (Micro One)
  • ME7660C - Charge Pump DC-DC Voltage Converter (Micro One)
  • ME700802 - Three-Phase Diode Bridge Modules (20 Amperes/800 Volts) (Powerex Powers)
  • ME700803 - Three-Phase Diode Bridge Modules (30 Amperes/800 Volts) (Powerex Powers)
  • ME701202 - Three-Phase Diode Bridge Modules (20 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME701203 - Three-Phase Diode Bridge Modules (30 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME701602 - Three-Phase Diode Bridge Modules (20 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME701603 - Three-Phase Diode Bridge Modules (30 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME7027A - (ME7027A / ME7044A) Voltage Detector (ETC)
Other Datasheets by Matsuki

Full PDF Text Transcription

Click to expand full text
N-Channel 40V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7642-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION PowerDFN 5x6 Top View ME7642/ME7642-G FEATURES ● RDS(ON)≦4mΩ@VGS=10V ● RDS(ON)≦5.5mΩ@VGS=4.
Published: |