ME7686-G Datasheet | Matsuki

DESCRIPTION The ME7686-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION Power DFN 5x6 Top View ME7686/ME7686-G FEATURES - RDS(ON)≦10.5mΩ@VGS=10V - RDS(ON)≦18mΩ@VGS=4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management in Note book - NB/MB High side switching - Battery Powered System - DC/DC Converter - Load Switch - The Ordering Information: ME7686/ME7686-G (Green...