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ME7686-G - N-Channel MOSFET

Download the ME7686-G datasheet PDF. This datasheet also covers the ME7686 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The ME7686-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦10.5mΩ@VGS=10V.
  • RDS(ON)≦18mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME7686-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME7686-G
Manufacturer Matsuki
File Size 1.13 MB
Description N-Channel MOSFET
Datasheet download datasheet ME7686-G Datasheet

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Full PDF Text Transcription

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N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7686-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION PowerDFN 5x6 Top View ME7686/ME7686-G FEATURES ● RDS(ON)≦10.5mΩ@VGS=10V ● RDS(ON)≦18mΩ@VGS=4.
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