Datasheet Details
| Part number | ME7686 |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.13 MB |
| Description | N-Channel MOSFET |
| Datasheet | ME7686-Matsuki.pdf |
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Overview: N-Channel 30V(D-S) Enhancement MOSFET GENERAL.
| Part number | ME7686 |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.13 MB |
| Description | N-Channel MOSFET |
| Datasheet | ME7686-Matsuki.pdf |
|
|
|
The ME7686-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
| Part Number | Description |
|---|---|
| ME7686-G | N-Channel MOSFET |
| ME7688 | N-Channel MOSFET |
| ME7688-G | N-Channel MOSFET |
| ME7607 | P-Channel MOSFET |
| ME7607-G | P-Channel MOSFET |
| ME7609D | P-Channel MOSFET |
| ME7609D-G | P-Channel MOSFET |
| ME7636 | N-Channel MOSFET |
| ME7636-G | N-Channel MOSFET |
| ME7639 | P-Channel MOSFET |