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N-Channel 30V(D-S) Enhancement MOSFET
GENERAL DESCRIPTION
The ME7686-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
PowerDFN 5x6 Top View
ME7686/ME7686-G
FEATURES
● RDS(ON)≦10.5mΩ@VGS=10V ● RDS(ON)≦18mΩ@VGS=4.
ME7686 Datasheet
