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ME7809-G - P-Channel MOSFET

This page provides the datasheet information for the ME7809-G, a member of the ME7809 P-Channel MOSFET family.

Description

The ME7809 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology .

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦10mΩ@VGS=-10V.
  • RDS(ON)≦16mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME7809-G

Datasheet Details

Part number ME7809-G
Manufacturer Matsuki
File Size 927.83 KB
Description P-Channel MOSFET
Datasheet download datasheet ME7809-G Datasheet
Additional preview pages of the ME7809-G datasheet.

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Full PDF Text Transcription

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P-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME7809 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology . This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and other battery powered circuits in a very small outline surface mount package. PIN CONFIGURATION (DFN 3x3) Botton View ME7809/ME7809-G FEATURES ● RDS(ON)≦10mΩ@VGS=-10V ● RDS(ON)≦16mΩ@VGS=-4.
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