ME7835S-G
ME7835S-G is P-Channel MOSFET manufactured by Matsuki.
DESCRIPTION
The ME7835S P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(DFN(S) 3.3x3.3) Top View
FEATURES
- RDS(ON) ≦18mΩ@VGS=-10V
- RDS(ON) ≦36mΩ@VGS=-4.5V
APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- Load Switch
- DSC e Ordering Information: ME7835S-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain...
