Datasheet Details
| Part number | ME7837S-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.22 MB |
| Description | P-Channel MOSFET |
| Datasheet | ME7837S-G-Matsuki.pdf |
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Overview: P-Channel 30-V (D-S) MOSFET, ESD Producted GENERAL.
| Part number | ME7837S-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.22 MB |
| Description | P-Channel MOSFET |
| Datasheet | ME7837S-G-Matsuki.pdf |
|
|
|
The ME7837S P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
| Part Number | Description |
|---|---|
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