ME80N08-G - N-Channel 80-V (D-S) MOSFET

Matsuki

Download the ME80N08-G datasheet PDF. This datasheet also covers the ME80N08 variant, as both devices belong to the same n-channel 80-v (d-s) mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME80N08 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦4.9mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

ME80N08-G n-channel 80-v (d-s) mosfet by Matsuki - Datasheet Preview — Note: The manufacturer provides a single datasheet file (ME80N08-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	ME80N08-G
Manufacturer	Matsuki
File Size	1.32 MB
Description	N-Channel 80-V (D-S) MOSFET
Datasheet	ME80N08-G Datasheet

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Other Datasheets by Matsuki

Part Number	Description
ME80N08	N-Channel 80-V (D-S) MOSFET
ME80N08A	N-Channel MOSFET
ME80N08A-G	N-Channel MOSFET
ME80N08AF	N-Channel MOSFET
ME80N08AF-G	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N- Channel 80-V (D-S) MOSFET ME80N08/ME80N08-G GENERAL DESCRIPTION The ME80N08 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-220) Top View FEATURES ● RDS(ON)≦4.