ME80N08-G
ME80N08-G is N-Channel 80-V (D-S) MOSFET manufactured by Matsuki.
- Part of the ME80N08 comparator family.
- Part of the ME80N08 comparator family.
DESCRIPTION
The ME80N08 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
(TO-220) Top View
FEATURES
- RDS(ON)≦4.9mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management
- DC/DC Converter
- Load Switch e Ordering Information: ME80N08 (Pb-free)
ME80N08-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current-
Tc=25℃ TC=70℃
Pulsed Drain Currenta
Power Dissipation
TC=25℃ TC=70℃
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient-
- Symbol VDSS VGSS
TJ, Tstg RθJC
Limit 80 ±20 196 164 784 300 210
-55 to 175 0.5
Unit V V
℃ ℃/W
- Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
- - The device mounted on 1in2 FR4 board with 2 oz copper.
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