ME80N08AF-G - N-Channel MOSFET

Matsuki

Download the ME80N08AF-G datasheet PDF. This datasheet also covers the ME80N08AF variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME80N08AF is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦5mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

ME80N08AF-G n-channel mosfet by Matsuki - Datasheet Preview — Note: The manufacturer provides a single datasheet file (ME80N08AF-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	ME80N08AF-G
Manufacturer	Matsuki
File Size	918.48 KB
Description	N-Channel MOSFET
Datasheet	ME80N08AF-G Datasheet

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Other Datasheets by Matsuki

Part Number	Description
ME80N08AF	N-Channel MOSFET
ME80N08A	N-Channel MOSFET
ME80N08A-G	N-Channel MOSFET
ME80N08AH	N-Channel MOSFET
ME80N08AH-G	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N-Channel 80V (D-S) MOSFET ME80N08AF/ME80N08AF-G GENERAL DESCRIPTION The ME80N08AF is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.