ME80N08AF-G Datasheet | Matsuki

DESCRIPTION The ME80N08AF is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES - RDS(ON)≦5mΩ@VGS=10V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management in Note book - DC/DC Converter - Load Switch - LCD Display inverter PIN CONFIGURATION (TO-220F) Top View - The Ordering Information: ME80N08A F(Pb-free) ME80N08AF-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Unit Drain-Source Voltage VDS 80 Gate-Source Voltage Continuous Drain Current- Pulsed Drain Currenta Power Dissipation Tc=25℃ TC=70℃ TC=25℃ TC=70℃ VGS ID IDM PD ±20 81 68 326 66...