ME80N08AF-G Description
The ME80N08AF is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
ME80N08AF-G Key Features
- RDS(ON)≦5mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME80N08AF-G Applications
- Power Management in Note book