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ME80N08AH - N-Channel MOSFET

Datasheet Summary

Description

The ME80N08AH is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦5mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME80N08AH

Datasheet Details

Part number ME80N08AH
Manufacturer Matsuki
File Size 794.83 KB
Description N-Channel MOSFET
Datasheet download datasheet ME80N08AH Datasheet
Additional preview pages of the ME80N08AH datasheet.

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80V N-Channel Enhancement Mode ME80N08AH/ME80N08AH-G GENERAL DESCRIPTION The ME80N08AH is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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