ME80N08AH-G Datasheet | Matsuki

DESCRIPTION The ME80N08AH is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURES - RDS(ON)≦5mΩ@VGS=10V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management in Note book - DC/DC Converter - Load Switch - LCD Display inverter (TO-263-2L) Top View The Ordering Information: ME80N08AH (Pb-free) ME80N08AH-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Unit Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±20 Continuous Drain Current- Pulsed Drain Currenta Tc=25℃ TC=70℃ ID IDM 129 108 516 Power Dissipation TC=25℃...