ME80N75T - N-Channel MOSFET

Matsuki

General Description

The ME80N75T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦10mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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ME80N75T n-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME80N75T
Manufacturer	Matsuki
File Size	1.10 MB
Description	N-Channel MOSFET
Datasheet	ME80N75T Datasheet

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Other Datasheets by Matsuki

Part Number	Description
ME80N75T-G	N-Channel MOSFET
ME80N75AF	N-Channel MOSFET
ME80N75AF-G	N-Channel MOSFET
ME80N75AT	N-Channel MOSFET
ME80N75AT-G	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N- Channel 75-V (D-S) MOSFET ME80N75T / ME80N75T-G GENERAL DESCRIPTION The ME80N75T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.