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ME8205E-G - Dual N-Channel MOSFET

This page provides the datasheet information for the ME8205E-G, a member of the ME8205E Dual N-Channel MOSFET family.

Datasheet Summary

Description

The ME8205E is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦22mΩ@VGS=4.5V.
  • RDS(ON)≦23mΩ@VGS=4.0V.
  • RDS(ON)≦26mΩ@VGS=3.0V.
  • RDS(ON)≦29mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME8205E-G

Datasheet Details

Part number ME8205E-G
Manufacturer Matsuki
File Size 585.95 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet ME8205E-G Datasheet
Additional preview pages of the ME8205E-G datasheet.

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Full PDF Text Transcription

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Dual N-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The ME8205E is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-26) Top View ME8205E/ME8205E-G FEATURES ● RDS(ON)≦22mΩ@VGS=4.5V ● RDS(ON)≦23mΩ@VGS=4.0V ● RDS(ON)≦26mΩ@VGS=3.0V ● RDS(ON)≦29mΩ@VGS=2.
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