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ME85P03-G - P-Channel MOSFET

Download the ME85P03-G datasheet PDF. This datasheet also covers the ME85P03 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The ME85P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦8mΩ@VGS=-10V.
  • RDS(ON)≦11mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME85P03-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME85P03-G
Manufacturer Matsuki
File Size 1.04 MB
Description P-Channel MOSFET
Datasheet download datasheet ME85P03-G Datasheet

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Full PDF Text Transcription

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P- Channel 30V (D-S) MOSFET ME85P03/ ME85P03-G GENERAL DESCRIPTION The ME85P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where switching, and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦8mΩ@VGS=-10V ● RDS(ON)≦11mΩ@VGS=-4.
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