Datasheet Details
| Part number | MEBSS123-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 726.96 KB |
| Description | N-Channel MOSFET |
| Datasheet | MEBSS123-G MEBSS123 Datasheet (PDF) |
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Overview: N - Channel 100-V (D-S) MOSFET MEBSS123/MEBSS123-G GENERAL.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MEBSS123-G |
|---|---|
| Manufacturer | Matsuki |
| File Size | 726.96 KB |
| Description | N-Channel MOSFET |
| Datasheet | MEBSS123-G MEBSS123 Datasheet (PDF) |
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|
|
The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
| Part Number | Description |
|---|---|
| MEBSS123 | N-Channel MOSFET |
| MEBSS138 | N-Channel MOSFET |
| MEBSS138-G | N-Channel MOSFET |
| MEBSS138D | N-Channel MOSFET |
| MEBSS138D-G | N-Channel MOSFET |
| MEBSS138DK | N-Channel MOSFET |
| MEBSS138DK-G | N-Channel MOSFET |
| MEBSS84 | P-Channel MOSFET |
| MEBSS84-G | P-Channel MOSFET |