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MEBSS123-G - N-Channel MOSFET

This page provides the datasheet information for the MEBSS123-G, a member of the MEBSS123 N-Channel MOSFET family.

Description

The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦6Ω@VGS=10V.
  • RDS(ON)≦10Ω@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – MEBSS123-G

Datasheet Details

Part number MEBSS123-G
Manufacturer Matsuki
File Size 726.96 KB
Description N-Channel MOSFET
Datasheet download datasheet MEBSS123-G Datasheet
Additional preview pages of the MEBSS123-G datasheet.

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Full PDF Text Transcription

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N - Channel 100-V (D-S) MOSFET MEBSS123/MEBSS123-G GENERAL DESCRIPTION The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON)≦6Ω@VGS=10V ● RDS(ON)≦10Ω@VGS=4.
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