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MAX1385 - (MAX1385 / MAX1386) Dual RF LDMOS Bias Controllers

General Description

The MAX1385/MAX1386 set and control bias conditions for dual RF LDMOS power devices found in cellular base stations.

Each device includes a high-side current-sense amplifier with programmable gains of 2, 10, and 25 to monitor LDMOS drain current over the 20mA to 5A range.

Key Features

  • to minimize error over time, temperature, and supply voltage. The MAX1385/MAX1386 feature an I2C/SPI™-compatible serial interface. Both devices operate from a 4.75V to 5.25V analog supply (3.2mA supply current), a 2.7V to 5.25V digital supply (3.1mA supply current), and a 4.75V to 11.0V gate-drive supply (4.5mA supply current). The MAX1385/MAX1386 are available in a 48-pin thin QFN package. Features.
  • Integrated High-Side Drain Current-Sense PGA with Gain of 2, 10, or 25.
  • ±0.5%.

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Part Number Description
MAX1386 (MAX1385 / MAX1386) Dual RF LDMOS Bias Controllers
MAX1300 Serial 16-Bit ADCs
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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19-4456; Rev 0; 2/09 www.DataSheet4U.com KIT ATION EVALU LE B A IL A AV Dual RF LDMOS Bias Controllers with I2C/SPI Interface General Description The MAX1385/MAX1386 set and control bias conditions for dual RF LDMOS power devices found in cellular base stations. Each device includes a high-side current-sense amplifier with programmable gains of 2, 10, and 25 to monitor LDMOS drain current over the 20mA to 5A range. Two external diode-connected transistors monitor LDMOS temperatures while an internal temperature sensor measures the local die temperature of the MAX1385/MAX1386. A 12-bit ADC converts the programmable-gain amplifier (PGA) outputs, external/internal temperature readings, and two auxiliary inputs.