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MAX1386 - (MAX1385 / MAX1386) Dual RF LDMOS Bias Controllers

Download the MAX1386 datasheet PDF. This datasheet also covers the MAX1385 variant, as both devices belong to the same (max1385 / max1386) dual rf ldmos bias controllers family and are provided as variant models within a single manufacturer datasheet.

General Description

The MAX1385/MAX1386 set and control bias conditions for dual RF LDMOS power devices found in cellular base stations.

Each device includes a high-side current-sense amplifier with programmable gains of 2, 10, and 25 to monitor LDMOS drain current over the 20mA to 5A range.

Key Features

  • to minimize error over time, temperature, and supply voltage. The MAX1385/MAX1386 feature an I2C/SPI™-compatible serial interface. Both devices operate from a 4.75V to 5.25V analog supply (3.2mA supply current), a 2.7V to 5.25V digital supply (3.1mA supply current), and a 4.75V to 11.0V gate-drive supply (4.5mA supply current). The MAX1385/MAX1386 are available in a 48-pin thin QFN package. Features.
  • Integrated High-Side Drain Current-Sense PGA with Gain of 2, 10, or 25.
  • ±0.5%.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAX1385_MaximIntegratedProducts.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Maxim Integrated (now Analog Devices)

Part Number Description
MAX1385 (MAX1385 / MAX1386) Dual RF LDMOS Bias Controllers
MAX1300 Serial 16-Bit ADCs
MAX1301 Serial 16-Bit ADCs
MAX13013 (MAX13013 - MAX13028) Single-/Dual-/Quad-Level Translators
MAX13014 (MAX13013 - MAX13028) Single-/Dual-/Quad-Level Translators

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
19-4456; Rev 0; 2/09 www.DataSheet4U.com KIT ATION EVALU LE B A IL A AV Dual RF LDMOS Bias Controllers with I2C/SPI Interface General Description The MAX1385/MAX1386 set and control bias conditions for dual RF LDMOS power devices found in cellular base stations. Each device includes a high-side current-sense amplifier with programmable gains of 2, 10, and 25 to monitor LDMOS drain current over the 20mA to 5A range. Two external diode-connected transistors monitor LDMOS temperatures while an internal temperature sensor measures the local die temperature of the MAX1385/MAX1386. A 12-bit ADC converts the programmable-gain amplifier (PGA) outputs, external/internal temperature readings, and two auxiliary inputs.