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MAX4105 - Op Amps

Download the MAX4105 datasheet PDF. This datasheet also covers the MAX4104 variant, as both devices belong to the same op amps family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanc.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAX4104-Maxim.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MAX4101 Low-Power Op Amps Maxim Integrated
MAX4103 250MHz / Broadcast-Quality / Low-Power Video Op Amps Maxim Integrated
MAX4109 Ultra-Low-Distortion Op Amps Maxim Integrated
MAX4130 Rail-to-Rail I/O Op Amps Maxim Integrated
MAX4131 Rail-to-Rail I/O Op Amps Maxim Integrated

Other Datasheets by Maxim Integrated (now Analog Devices)

Part Number Description
MAX410 Single/Dual/Quad / 28MHz / Low-Noise / Low-Voltage / Precision Op Amps
MAX4100 500MHz / Low-Power Op Amps
MAX4102 250MHz / Broadcast-Quality / Low-Power Video Op Amps
MAX4104 350MHz / Ultra-Low-Noise Op Amps
MAX4106 350MHz / Ultra-Low-Noise Op Amps

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD-97311 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF67230 100K Rads (Si) IRHF63230 300K Rads (Si) RDS(on) 0.145Ω 0.145Ω ID 9.1A 9.1A IRHF67230 200V, N-CHANNEL TECHNOLOGY International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.