MAX1386 Description
The MAX1385/MAX1386 set and control bias conditions for dual RF LDMOS power devices found in cellular base stations. Each device includes a high-side current-sense amplifier with programmable gains of 2, 10, and 25 to monitor LDMOS drain current over the 20mA to 5A range. Two external diode-connected transistors monitor LDMOS temperatures while an internal temperature sensor measures the local die temperature of the...
MAX1386 Key Features
- Integrated High-Side Drain Current-Sense PGA with Gain of 2, 10, or 25
- ±0.5% Accuracy for Sense Voltage Between 75mV and 250mV
- Full-Scale Sense Voltage of 100mV with Gain of 25
- Full-Scale Sense Voltage of 250mV with Gain of 10
- mon-Mode Range of 5V to 30V Drain Voltage for LDMOS
- Adjustable Low Noise 0 to 5V, 0 to 10V Output Gate-Bias Voltage Ranges with ±10mA Gate Drive
- Fast Clamp to 0V for LDMOS Protection
- 8-Bit DAC Control of Gate-Bias Voltage
- 10-Bit DAC Control of Gate-Bias Offset with Temperature
- Internal Die Temperature Measurement
MAX1386 Applications
- EP = Exposed pad. --Future product-contact factory for availability