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2N5832 - NPN Transistor Plastic-case Bipolar

Key Features

  • Through Hole Package    omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2N5832 Plastic-case Bipolar NPN Transistor C B E Pin Configuration Bottom View Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage (I C=300mAdc) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Breakdown Current (VCE=120Vdc) Min 140 160 5.0 50 Max Units A V.

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MCC Features • Through Hole Package   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2N5832 Plastic-case Bipolar NPN Transistor C B E Pin Configuration Bottom View Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage (I C=300mAdc) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Breakdown Current (VCE=120Vdc) Min 140 160 5.0 50 Max Units A Vdc Vdc Vdc nAdc TO-92 E OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO B ON CHARACTERISTICS hFE DC Current Gain* C 175 (I C=10mAdc, VCE=5.0Vdc) 500 VCE(sat) Collector-Emitter Saturation Voltage (I C=10mAdc) 0.