MMS8550 Datasheet | Micro Commercial Components

Features - - - - - - omponents 20736 Marilla Street Chatsworth !"# $ % !"# SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: 2TY PNP Silicon Plastic-Encapsulate Transistor SOT-23 A D w.. Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector-Base Breakdown Voltage (IC=100u Adc, IE =0) Collector-Emitter Breakdown Voltage (IC=0.1m Adc, IB =0) Emitter-Base Breakdown Voltage (IE =100u Adc, IC=0) Collector Cutoff Current (VCB=40Vdc, IE =0) Collector Cutoff Current (VCE=20Vdc, IB =0) Emitter Cutoff Current (VEB =3.0Vdc, IC=0) DC Current Gain (IC=50m Adc, V CE=1.0Vdc) DC Current Gain (IC=500m Adc, V CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=500m Adc, IB =50m Adc) Base-Emitter Saturation Voltage (IC=500m Adc, IB =50m Adc) Base- Emitter Voltage (IE =100m Adc) Transistor Frequency (IC=20m Adc, V CE=6.0Vdc, f=30MHz) Min 40 25 5.0 ------Max ------0.1 0.1 0.1 Units Vdc Vdc Vdc OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO B u Adc u Adc G H J u Adc DIMENSIONS ON CHARACTERISTICS h FE(1) h FE(2) VCE(sat) VBE(sat) VEB 120 50 ------350 --0.6 1.2 1.4 ----Vdc Vdc Vdc DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE SMALL-SIGNAL CHARACTERISTICS f T 150 --MHz Suggested Solder Pad Layout .031 .800 .035 .900 CLASSIFICATION OF HFE (1) Rank Range L 120-200 H 200-350 .037 .950 .037 .950 .079 2.000 inches mm .mccsemi. Revision: 2...