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RF POWER MOSFET
N-CHANNEL ENHANCEMENT MODE
The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF power transistor making the pair well suited for bridge configurations
ARF300
125V, 300W, 45MHz
• Specified 125 Volt, 27 MHz Characteristics: Output Power = 300 Watts. Gain = 15dB (Class E) Efficiency = 80%
• RoHS Compliant
• High Performance • High Voltage Breakdown and Large SOA
for Superior Ruggedness • Low Thermal Resistance.