MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063” from Case for 10 Sec. All Ratings: TC =25°C unless otherwise specified Ratings Unit 500 V 500 24 A ±30 V 1000 W -55 to 175 °C 300 Static ELECTRICAL CHARACTERISTICS
Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Voltage 1 (ID(ON) = 12A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50VDSS, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 12A) Gate Threshold Voltage (VDS = VGS, ID = 10mA) Min Typ Max Unit 500 V 3 4 25 μA 250 ±100 nA 5 8 mhos 2.5 4 5 Volts Thermal Characteristics Symbol RθJC RθJHS Parameter Min Typ Max Unit Ju...
Microchip Technology
