ARF300 Datasheet | Microsemi

125V, 300W, 45MHz N-CHANNEL ENHANCEMENT MODE ..net RF POWER MOSFET The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF power transistor making the pair well suited for bridge configurations - Specified 125 Volt, 27 MHz Characteristics: Output Power = 300 Watts. Gain = 15d B (Class E) Efficiency = 80% - Ro HS pliant - High Performance - High Voltage Breakdown and Large SOA for Superior Ruggedness - Low Thermal Resistance. - Capacitance matched with ARF301 P-Channel Maximum Ratings Symbol VDSS VDGO ID VGS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063” from Case for 10 Sec. All Ratings: TC =25°C unless otherwise specified Ratings 500 500 24 ±30 1000 -55 to 175 300 Unit V A V W °C Static Electrical Characteristics Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Voltage 1 (ID(ON) = 12A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50VDSS, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 12A) Gate Threshold Voltage (VDS = VGS, ID = 10m A) 5 2.5 8 4 5 Min 500 3 4 25 250 ±100 Typ Max Unit V μA n A mhos Volts Thermal Characteristics Symbol RθJC RθJHS Parameter Junction to Case Junction to Sink (High Efficiency Thermal Joint pound and Planar Heat Sink Surface.) Min Typ Max 0.15 0.27 Unit 050-4948 Rev B 9-2010 °C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://.microsemi. Dynamic Characteristics...