Microchip Technology ICP2637
ICP2637 is a three stage MMIC power amplif ier in bare die form, f abricated using GaN on SiC technology. The PA operates f rom 23-31GHz with 37dBm output power, 25% PAE and 23dB small signal gain. The die has integrated DC blocking capacitors and is matched to 50ohms on the RF input and output ports.| Part No. | ICP2637 |
|---|---|
| Datasheet | ICP2637 Download |
| Manufacturer |  Microchip Technology |
| Description | 23-31GHz 5W GaN PA MMIC |
| Buy | Stock & Price |
FEATURES
● Frequency Range: 23-31GHz● Pout: 37 dBm @ 19dBm Pin
● PAE: 25 %
● Small Signal Gain: 23dB
● Bias: VD=28V IDQ=84mA
● Technology: GaN on SiC
● Lead-f ree and RoHS compliant
● Integrated Power Detector
● Chip Dimensions: 3.1x1.78x0.05mm
APPLICATIONS
● 5G● Satellite Communications
● Aerospace & Defense Functional Block Diagram VG VD VG VD VG VD RF IN RF OUT
ELECTRICAL SPECIFICATIONS
| Test Conditions unless otherwise stated | VD=28V, ID=84mA, TA=25 oC, CW Min Typ Max Units Frequency 23 31 GHz Output Power @ Psat Pin=19dBm 37 dBm PAE @ Psat Small Signal Gain Pin=19dBm 25 % 23 dB Input Return Loss 10 dB Output Return Loss 7 dB IDQ 84 mA © 2023 Microchip Technology Inc. and its subsidiaries Datasheet Rev E Page 1 23-31GHz 5W GaN PA MMIC ICP2637ABSOLUTE MAXIMUM RATINGS
Drain Voltage (VD) Gate Voltage Range (VG) 30.0V -5 to 0V Gate Current Drain Current (CW) TA=25ºC CW Input Power 50ohm, TA=25ºC Channel Temperature Storage Temperature 4.2mA 1.5A +25dBm 275°C -65°C to +150°C Exceeding any one or combination of these limits may cause permanent damage to this device.
