Microchip Technology ICP2637P
ICP2637P is a three stage MMIC power amplifier in a 5x5mm QFN package, fabricated using GaN on SiC technology. The PA operates from 23-31GHz with 37dBm output power, 25% PAE and 23dB small signal gain. The die has integrated DC blocking capacitors and is matched to 50ohms on the RF input and output ports.| Part No. | ICP2637P |
|---|---|
| Datasheet | ICP2637P Download |
| Manufacturer |  Microchip Technology |
| Description | 23-31GHz 5W GaN PA MMIC |
| Buy | Stock & Price |
FEATURES
● Frequency Range: 23-31GHz● Pout: 37 dBm @ 19dBm Pin
● PAE: 25 %
● Small Signal Gain: 23dB
● Bias: VD=28V IDQ=84mA
● Technology: GaN on SiC
● Lead-free and RoHS compliant
● Package: = 5mm x 5mm 32 Lead QFN
● Integrated Power Detector
APPLICATIONS
● 5G● Satellite Communications
● Aerospace & Defense Functional Block Diagram VG VD VG VD VG VD RF IN RF OUT
ELECTRICAL SPECIFICATIONS
| Test Conditions unless otherwise stated | VD=28V, ID=84mA, TA=25 oC, CW Min Typ Max Units Frequency 23 31 GHz Output Power @ Psat PAE @ Psat Pin=19dBm Pin=19dBm 37 dBm 25 % Small Signal Gain 23 dB Input Return Loss 10 dB Output Return Loss IDQ VGS ID drive Pout 37dBm 7 dB 84 mA 2.04 V 1200 mA © 2023 Microchip Technology Inc. and its subsidiaries Datasheet Rev D Page 1 23-31GHz 5W GaN PA MMIC ICP2637PELECTRICAL SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
Thermal and Reliability Drain Voltage (VD) Gate Voltage Range (VG) 30.0V -5 to 0V Gate Current Drain Current (CW) TA=25ºC CW Input Power 50ohm, TA=25...
