JANSR2N7593U3 Datasheet | Microchip Technology

Overview Microchip’s new M6TM technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic power MOSFETs targeted for space and military applications. Microchip rad-hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for total dose and single-event environments. M6 will perform in extreme-environment applications and will remain within specification in radiation evironments up to 100 krad total ionizing dose (TID). Figure 1. MRH25N12U3SR/JANSR2N7593U3 Features The following are key features of the MRH25N12U3SR/JANSR2N7593U3 device: - Low RDS(on) - Fast switching - Single-event hardened - Low gate charge - Simple drive - Ease of paralleling - Hermetically sealed - Surface-mount design - Ceramic package - ESD rating: Class 3B MIL-STD-750, TM 1020 Applications The MRH25N12U3SR/JANSR2N7593U3 device is designed for the following applications: - DC- DC converters - Motor control - Switch mode power supplies Data Sheet © 2023 Microchip Technology Inc. and its subsidiaries DS00004034C - 1 MRH25N12U3SR/JANSR2N7593U3 Table of Contents Product Overview 1. Electrical Performance 3 1.1. Absolute Maximum Ratings 3 1.2. Electrical Performance 3 1.3. Typical Performance Curves 5 2. Single-Event Effects...