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MSC080SMA120J - N-Channel Power MOSFET

Features

  • Low capacitances and low gate charge.
  • Fast switching speed due to low internal gate resistance (ESR).
  • Stable operation at high junction temperature, TJ(max) = 175 °C.
  • Fast and reliable body diode.
  • Superior avalanche ruggedness.
  • RoHS compliant.
  • Isolated voltage to 2500V, UL certified file E145592 Benefits.
  • High efficiency to enable lighter and more compact system.
  • Simple to drive and easy to parallel.
  • Impro.

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Full PDF Text Transcription

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1200V, 80 mΩ N-Channel mSiC™ MOSFET MSC080SMA120J Product Overview 1200V, 80 mΩ typical at VGS = 20V, 90 mΩ typical at VGS = 18V, Silicon Carbide (SiC) N-Channel MOSFET, SOT-227.
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