SST39SF040 Description
The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories.
SST39SF040 Key Features
- Organized as 128K x8 / 256K x8 / 512K x8
- Single 4.5-5.5V Read and Write Operations
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
- Low Power Consumption (typical values at 14 MHz)
- Active Current: 10 mA (typical)
- Standby Current: 30 µA (typical)
- Sector-Erase Capability
- Uniform 4 KByte sectors