SST39SF040 Datasheet | Silicon Storage Technology

FEATURES : - Organized as 128K x8 / 256K x8 / 512K x8 - Single 5.0V Read and Write Operations - Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention - Low Power Consumption: - Active Current: 10 m A (typical) - Standby Current: 30 µA (typical) - Sector-Erase Capability - Uniform 4 KByte sectors - Fast Read Access Time: - 45 and 70 ns - Latched Address and Data - Fast Erase and Byte-Program: - Sector-Erase Time: 18 ms (typical) - Chip-Erase Time: 70 ms (typical) - Byte-Program Time: 14 µs (typical) - Chip Rewrite Time: 2 seconds (typical) for SST39SF010A 4 seconds (typical) for SST39SF020A 8 seconds (typical) for SST39SF040 - Automatic Write Timing - Internal VPP Generation - End-of-Write Detection - Toggle Bit - Data# Polling - TTL I/O patibility - JEDEC Standard - Flash EEPROM Pinouts and mand sets - Packages Available - 32-pin PLCC - 32-pin TSOP (8mm x 14mm) - 32-pin PDIP PRODUCT DESCRIPTION The SST39SF010A/020A/040 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST39SF010A/020A/040 devices write (Program or Erase) with a 5.0V power supply. The SST39SF010A/020A/040 devices conform to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST39SF010A/020A/040 devices provide a maximum Byte-Program time of 20 µsec. These devices use Toggle Bit or Data# Polling to indicate the pletion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST39SF010A/020A/040 devices are suited for applications that require...