TN2106 Datasheet PDF - Microchip N-Channel Vertical DMOS FET Specs

TN2106 - N-Channel Vertical DMOS FET

Datasheet Summary

Description

The TN2106 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.

Features

Free from Secondary Breakdown.
Low Power Drive Requirement.
Ease of Paralleling.
Low CISS and Fast Switching Speeds.
Excellent Thermal Stability.
Integral Source-Drain Diode.
High Input Impedance and High Gain.

Datasheet Details

Part number	TN2106
Manufacturer	Microchip
File Size	811.02 KB
Description	N-Channel Vertical DMOS FET
Datasheet	TN2106 Datasheet
Additional preview pages of the TN2106 datasheet.

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Full PDF Text Transcription

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TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers • Telecommunication Switches General Description The TN2106 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.

Published: Jan 22, 2024 |