TN2106 Overview
The TN2106 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and...
TN2106 Key Features
- Free from Secondary Breakdown
- Low Power Drive Requirement
- Ease of Paralleling
- Low CISS and Fast Switching Speeds
- Excellent Thermal Stability
- Integral Source-Drain Diode
- High Input Impedance and High Gain
TN2106 Applications
- Logic-Level Interfaces (Ideal for TTL and CMOS)
