TN2106 Datasheet N-Channel Vertical DMOS FET

Manufacturer: Microchip Technology

Overview: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET.

TN2106 n-channel vertical dmos fet by Microchip Technology - Datasheet Preview

Datasheet Details

Part number	TN2106
Manufacturer	Microchip Technology
File Size	811.02 KB
Description	N-Channel Vertical DMOS FET
Download	TN2106 Download (PDF)

General Description

The TN2106 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

Key Features

Free from Secondary Breakdown.
Low Power Drive Requirement.
Ease of Paralleling.
Low CISS and Fast Switching Speeds.
Excellent Thermal Stability.
Integral Source-Drain Diode.
High Input Impedance and High Gain.

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