TN2106 Description
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal run.
TN2106 Key Features
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Low CISS and fast switching speeds
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and high gain
- plementary N- and P-channel devices
TN2106 Applications
- ideal for TTL and CMOS ► Solid state relays ► Battery operated systems ► Photo-voltaic drives ► Analog switches ► General purpose line drivers ► Tele switches