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TN2106 - N-Channel Enhancement-Mode Vertical DMOS FETs

General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

Key Features

  • Free from secondary breakdown.
  • Low power drive requirement.
  • Ease of paralleling.
  • Low CISS and fast switching speeds.
  • Excellent thermal stability.
  • Integral source-drain diode.
  • High input impedance and high gain.
  • Complementary N- and P-channel devices.

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Datasheet Details

Part number TN2106
Manufacturer Supertex Inc
File Size 441.83 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet TN2106 Datasheet

Full PDF Text Transcription (Reference)

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TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain ► Complementary N- and P-channel devices Applications ► Logic level interfaces - ideal for TTL and CMOS ► Solid state relays ► Battery operated systems ► Photo-voltaic drives ► Analog switches ► General purpose line drivers ► Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.