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TN2106 Datasheet N-channel Enhancement-mode Vertical Dmos Fets

Manufacturer: Supertex Inc

Overview: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET.

Datasheet Details

Part number TN2106
Manufacturer Supertex Inc
File Size 441.83 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet TN2106_SupertexInc.pdf

General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free from thermal run

Key Features

  • Free from secondary breakdown.
  • Low power drive requirement.
  • Ease of paralleling.
  • Low CISS and fast switching speeds.
  • Excellent thermal stability.
  • Integral source-drain diode.
  • High input impedance and high gain.
  • Complementary N- and P-channel devices.

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