Microchip Technology TN2501
The TN2501 low-threshold Enhancement-mode (normally-off) transistor uses a vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices.| Part No. | TN2501 |
|---|---|
| Datasheet | TN2501 Download |
| Manufacturer |  Microchip Technology |
| Description | N-Channel Vertical DMOS FET |
| Buy | Stock & Price |
FEATURES
● Low Threshold● High Input Impedance
● 110 pF Maximum Low-Input Capacitance
● Fast Switching Speeds
● Low On-Resistance
● Free from Secondary Breakdown
● Low Input and Output Leakage
APPLICATIONS
● Logic-Level Interfaces (Ideal for TTL and CMOS)● Solid-State Relays
● Battery-Operated Systems
● Photovoltaic Drives
● Analog Switches
● General Purpose Line Drivers
● Telecommunication Switches
GENERAL DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Type See Table 3-1 for pin information. 3-lead SOT-89 (Top view) DRAIN SOURCE DRAIN GATE 2018 Microchip Technology Inc. DS20005948A-page 1 TN2501 1.0ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
† Drain-to-Source Voltage ...........................................................................................
