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TN2501 Datasheet N-channel Vertical Dmos Fet

Manufacturer: Microchip Technology

Overview: TN2501 N-Channel Enhancement-Mode Vertical DMOS FET.

General Description

The TN2501 low-threshold Enhancement-mode (normally-off) transistor uses a vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well-proven silicon-gate manufacturing process.

This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices.

Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

Key Features

  • Low Threshold.
  • High Input Impedance.
  • 110 pF Maximum Low-Input Capacitance.
  • Fast Switching Speeds.
  • Low On-Resistance.
  • Free from Secondary Breakdown.
  • Low Input and Output Leakage.

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