Datasheet Details
| Part number | TN2501 |
|---|---|
| Manufacturer | Microchip Technology |
| File Size | 949.65 KB |
| Description | N-Channel Vertical DMOS FET |
| Datasheet | TN2501-Microchip.pdf |
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Overview: TN2501 N-Channel Enhancement-Mode Vertical DMOS FET.
| Part number | TN2501 |
|---|---|
| Manufacturer | Microchip Technology |
| File Size | 949.65 KB |
| Description | N-Channel Vertical DMOS FET |
| Datasheet | TN2501-Microchip.pdf |
|
|
|
The TN2501 low-threshold Enhancement-mode (normally-off) transistor uses a vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well-proven silicon-gate manufacturing process.
This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices.
Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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TN2501 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
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