Supertex Inc TN2501
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.| Part No. | TN2501 |
|---|---|
| Datasheet | TN2501 Download |
| Manufacturer |  Supertex Inc |
| Description | N-Channel Enhancement-Mode Vertical DMOS FETs |
| Buy | Stock & Price |
FEATURES
► Low threshold ► High input impedance ► Low input capacitance (110pF max.) ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakageAPPLICATIONS
► Logic level interfaces - ideal for TTL and CMOS ► Solid state relays ► Battery operated systems ► Photo voltaic drives ► Analog switches ► General purpose line drivers ► Telecom switchesGENERAL DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FET
