Microchip Technology TN2640
The TN2640 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.| Part No. | TN2640 |
|---|---|
| Datasheet | TN2640 Download |
| Manufacturer |  Microchip Technology |
| Description | N-Channel Vertical DMOS FET |
| Buy | Stock & Price |
FEATURES
● 2V Maximum Low Threshold● High Input Impedance
● Low Input Capacitance
● Fast Switching Speeds
● Low On-Resistance
● Free from Secondary Breakdown
● Low Input and Output Leakage
APPLICATIONS
● Logic-Level Interfaces (Ideal for TTL and CMOS)● Solid-State Relays
● Battery-Operated Systems
● Photovoltaic Drives
● Analog Switches
● General Purpose Line Drivers
● Telecommunication Switches
GENERAL DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Types 3-lead TO-252 (D-PAK) (Top view) DRAIN 3-lead TO-92 (Top view) SOURCE GATE SOURCE DRAIN GATE See Table 3-1, Table 3-2, and Table 3-3 for pin information. 8-lead SOIC (Top view) DRAIN DRAIN DRAIN DRAIN GATE SOURCE N/C N/C 2021 Microchip Technology Inc.
