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TN2640 - N-Channel Enhancement-Mode Vertical DMOS FETs

Description

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

Features

  • Low threshold (2.0V max. ).
  • High input impedance.
  • Low input capacitance.
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakage.

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Datasheet preview – TN2640

Datasheet Details

Part number TN2640
Manufacturer Supertex Inc
File Size 476.28 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet TN2640 Datasheet
Additional preview pages of the TN2640 datasheet.

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Full PDF Text Transcription

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Supertex inc. TN2640 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►►Low threshold (2.0V max.) ►►High input impedance ►►Low input capacitance ►►Fast switching speeds ►►Low on-resistance ►►Free from secondary breakdown ►►Low input and output leakage Applications ►►Logic level interfaces - ideal for TTL and CMOS ►►Solid state relays ►►Battery operated systems ►►Photo voltaic drives ►►Analog switches ►►General purpose line drivers ►►Telecom switches General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
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