Supertex Inc TN2640
This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.| Part No. | TN2640 |
|---|---|
| Datasheet | TN2640 Download |
| Manufacturer |  Supertex Inc |
| Description | N-Channel Enhancement-Mode Vertical DMOS FETs |
| Buy | Stock & Price |
FEATURES
►►Low threshold (2.0V max.) ►►High input impedance ►►Low input capacitance ►►Fast switching speeds ►►Low on-resistance ►►Free from secondary breakdown ►►Low input and output leakageAPPLICATIONS
►►Logic level interfaces - ideal for TTL and CMOS ►►Solid state relays ►►Battery operated systems ►►Photo voltaic drives ►►Analog switches ►►General purpose line drivers ►►Telecom switchesGENERAL DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced second
