Datasheet4U Logo Datasheet4U.com

TP2535 - P-Channel Vertical DMOS FETs

General Description

The TP2535 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.

Key Features

  • 2.4V Maximum Low Threshold.
  • High Input Impedance.
  • 60 pF Low Input Capacitance.
  • Fast Switching Speeds.
  • Low On-Resistance.
  • Free from Secondary Breakdown.
  • Low Input and Output Leakage.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TP2535 P-Channel Vertical DMOS FETs Supertex Inc
TP2502 P-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc
TP250A Current Transducers Topstek
TP2510 P-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc
TP2520 P-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc

Other Datasheets by Microchip Technology

Part Number Description
TP2502 P-Channel Vertical DMOS FET
TP2520 P-Channel Vertical DMOS FET
TP2522 P-Channel Vertical DMOS FET
TP2540 P-Channel Vertical DMOS FET
TP2104 P-Channel Vertical DMOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TP2535 P-Channel Enhancement-Mode Vertical DMOS FET Features • –2.4V Maximum Low Threshold • High Input Impedance • 60 pF Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers • Telecommunication Switches General Description The TP2535 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.