Supertex Inc TP2535
This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.FEATURES
► Low threshold (-2.4V max.) ► High input impedance ► Low input capacitance (125pF max.) ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakageAPPLICATIONS
► Logic level interfaces - ideal for TTL and CMOS ► Solid state relays ► Battery operated systems ► Photo voltaic drives ► Analog switches ► General purpose line drivers ► Telecom switchesGENERAL DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermallyinduced secondary breakdown.