The TP2635 is a low-threshold, Enhancement-mode (normally-off) transistor that uses an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process.
Full PDF Text Transcription for TP2635 (Reference)
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TP2635. For precise diagrams, and layout, please refer to the original PDF.
TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features • –2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-R...
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t Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers • Telecommunication Switches General Description The TP2635 is a low-threshold, Enhancement-mode (normally-off) transistor that uses an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process.
TP2635 Datasheet
