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TP2635 - P-Channel Enhancement-Mode Vertical DMOS FETs

Datasheet Summary

Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

Features

  • Low threshold (-2.0V max. ).
  • High input impedance.
  • Low input capacitance.
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakage.

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Datasheet preview – TP2635

Datasheet Details

Part number TP2635
Manufacturer Supertex Inc
File Size 339.25 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet TP2635 Datasheet
Additional preview pages of the TP2635 datasheet.

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Full PDF Text Transcription

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Supertex inc. TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features ►► Low threshold (-2.0V max.) ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage Applications ►► Logic level interfaces - ideal for TTL and CMOS ►► Solid state relays ►► Battery operated systems ►► Photo voltaic drives ►► Analog switches ►► General purpose line drivers ►► Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.
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