Microchip Technology VN0106
The VN0106 Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.| Part No. | VN0106 |
|---|---|
| Datasheet | VN0106 Download |
| Manufacturer |  Microchip Technology |
| Description | N-Channel Vertical DMOS FET |
| Buy | Stock & Price |
FEATURES
● Free from Secondary Breakdown● Low Power Drive Requirement
● Ease of Paralleling
● Low CISS and Fast Switching Speeds
● Excellent Thermal Stability
● Integral Source-Drain Diode
● High Input Impedance and High Gain
APPLICATIONS
● Motor Controls● Converters
● Amplifiers
● Switches
● Power Supply Circuits
● Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)
GENERAL DESCRIPTION
Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited for a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Type 3-lead TO-92 (Top view) See Table 3-1 for pin information. SOURCE DRAIN GATE 2021 Microchip Technology Inc. DS20006570A-page 1 VN0106 1.0ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
† Drain-to-Source Voltage ...................................................................................................................
