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VN0106 Datasheet N-channel Enhancement-mode Vertical Dmos Fet

Manufacturer: Supertex Inc

Overview: VN0106 N-Channel Enhancement-Mode Vertical DMOS FET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number VN0106
Manufacturer Supertex Inc
File Size 343.91 KB
Description N-Channel Enhancement-Mode Vertical DMOS FET
Datasheet VN0106 VN0 Datasheet (PDF)

General Description

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Key Features

  • Free from secondary breakdown.
  • Low power drive requirement.
  • Ease of paralleling.
  • Low CISS and fast switching speeds.
  • Excellent thermal stability.
  • Integral source-drain diode.
  • High input impedance and high gain.

Similar Datasheet

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Supertex Logo VN0106N5 Understanding MOSFET Supertex
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VN0106 Distributor