VN0106 Datasheet PDF | Supertex Inc

Supertex Inc VN0106

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefﬁcient inherent in MOS devices.

Part No.	VN0106
Datasheet	VN0106 Download
Manufacturer	Supertex Inc
Description	N-Channel Enhancement-Mode Vertical DMOS FET
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FEATURES

► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain

APPLICATIONS

► Motor controls ► Converters ► Ampliﬁers ► Switches ► Power supply circuits ► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

GENERAL DESCRIPTION

Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device Package Option TO-92 VN0106 VN0106N3-G -G indicates package is RoHS compliant (‘Green’) BVDSS/BVDGS (V) 60 RDS(ON) (max) (Ω) 3.0 Pin Conﬁguration ID(ON) (min) (A) 2.0 Absol...

VN0106 Datasheets by Manufacturer

1 datasheets

Part Number	Manufacturer
VN0106	Microchip Technology