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VN0106 - N-Channel Enhancement-Mode Vertical DMOS FET

Download the VN0106 datasheet PDF. This datasheet also covers the VN0 variant, as both devices belong to the same n-channel enhancement-mode vertical dmos fet family and are provided as variant models within a single manufacturer datasheet.

General Description

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

Key Features

  • Free from secondary breakdown.
  • Low power drive requirement.
  • Ease of paralleling.
  • Low CISS and fast switching speeds.
  • Excellent thermal stability.
  • Integral source-drain diode.
  • High input impedance and high gain.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VN0-104.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VN0106
Manufacturer Supertex Inc
File Size 343.91 KB
Description N-Channel Enhancement-Mode Vertical DMOS FET
Datasheet download datasheet VN0106 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain Applications ► Motor controls ► Converters ► Amplifiers ► Switches ► Power supply circuits ► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.