Microchip Technology VN2110
The VN2110 low-threshold, Enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.| Part No. | VN2110 |
|---|---|
| Datasheet | VN2110 Download |
| Manufacturer |  Microchip Technology |
| Description | N-Channel Vertical DMOS FET |
| Buy | Stock & Price |
FEATURES
● Free from Secondary Breakdown● Low Power Drive Requirement
● Ease of Paralleling
● Low CISS and Fast Switching Speeds
● High Input Impedance and High Gain
APPLICATIONS
● Motor Controls● Converters
● Amplifiers
● Switches
● Power Supply Circuits
● Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)
GENERAL DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited for a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Type See Table 3-1 for pin information. 3-lead SOT-23 (Top view) DRAIN SOURCE GATE 2021 Microchip Technology Inc. DS20005793A-page 1 VN2110 1.0ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
† Drain-to-Source Voltage ......................................................................................................................................
