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EDB8164B4PK - LPDDR2 SDRAM

This page provides the datasheet information for the EDB8164B4PK, a member of the EDB8164B4PR LPDDR2 SDRAM family.

Features

  • LPDDR2 SDRAM EDB8164B4PR, EDB8164B4PK, EDB8164B4PT, EDBA164B2PR Features.
  • Ultra-low-voltage core and I/O power supplies.
  • Frequency range.
  • 533 MHz (data rate: 1066 Mb/s/pin).
  • 4n prefetch DDR architecture.
  • 8 internal banks for concurrent operation.
  • Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge.
  • Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c).
  • Programmable.

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Full PDF Text Transcription

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216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features LPDDR2 SDRAM EDB8164B4PR, EDB8164B4PK, EDB8164B4PT, EDBA164B2PR Features • Ultra-low-voltage core and I/O power supplies • Frequency range – 533 MHz (data rate: 1066 Mb/s/pin) • 4n prefetch DDR architecture • 8 internal banks for concurrent operation • Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge • Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c) • Programmable READ and WRITE latencies (RL/WL) • Burst length: 4, 8, and 16 • Per-bank refresh for concurrent operation • Auto temperature-compensated self refresh (ATCSR) by built-in temperature sensor • Partial-array self refresh (PASR) • Deep power-down mode (DPD) • Selectable output drive strength (DS) • Clock-sto
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