EDB8164B4PR
EDB8164B4PR is LPDDR2 SDRAM manufactured by Micron Technology.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
LPDDR2 SDRAM
EDB8164B4PR, EDB8164B4PK, EDB8164B4PT, EDBA164B2PR
Features
- Ultra-low-voltage core and I/O power supplies
- Frequency range
- 533 MHz (data rate: 1066 Mb/s/pin)
- 4n prefetch DDR architecture
- 8 internal banks for concurrent operation
- Multiplexed, double data rate, mand/address inputs; mands entered on each CK_t/CK_c edge
- Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c)
- Programmable READ and WRITE latencies (RL/WL)
- Burst length: 4, 8, and 16
- Per-bank refresh for concurrent operation
- Auto temperature-pensated self refresh (ATCSR) by built-in temperature sensor
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