EDB8164B4PR Description
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM.
EDB8164B4PR Key Features
- Ultra-low-voltage core and I/O power supplies
- Frequency range
- 533 MHz (data rate: 1066 Mb/s/pin)
- 4n prefetch DDR architecture
- 8 internal banks for concurrent operation
- Multiplexed, double data rate, mand/address
- Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c)
- Programmable READ and WRITE latencies (RL/WL)
- Burst length: 4, 8, and 16
- Per-bank refresh for concurrent operation