Datasheet Summary
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8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY
FLASH MEMORY
Features
Dedicated mands to decrease programming times for both in-factory and in-system operations Fast programming algorithm (FPA) for fast PROGRAM operation 16-word page Flexible 8Mb multipartition architecture Single word (16-bit) data bus Support for true concurrent operation with zero latency Basic configuration:
- 135 individually programmable/erasable blocks
- 16 partitions (8Mb each for code and data storage) Operating Voltage
- VCC = 1.70V (MIN)- 1.95V (MAX)
- VCCQ = 1.70V (MIN)- 2.24V (MAX) VPP = 1.8V (TYP) for in-system PROGRAM/ERASE
- 12V ±5% (HV) VPP tolerant (factory programming patibility)...