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MT28F400B3 - FLASH MEMORY

Download the MT28F400B3 datasheet PDF. This datasheet also covers the MT28F004B3 variant, as both devices belong to the same flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits).

Key Features

  • Seven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks.
  • Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT28F004B3_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for MT28F400B3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MT28F400B3. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply (Smart 3) FEATURES • Seven erase blocks: 40-Pin 16KB/8K-wo...

View more extracted text
Dual Supply (Smart 3) FEATURES • Seven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming1 • Compatible with 0.3µm Smart 3 device • Advanced 0.18µm CMOS floating-gate process • Address access time: 80ns • 100,000 ERASE cycles • Industry-standard pinouts • Inputs and outputs are fully TTL-compatible • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence • Byte- or word-wide READ and WRITE DataSheet4U.

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