MT28FW01GABA1HJS-0AAT Datasheet | Micron Technology

Features Parallel NOR Flash Automotive Memory MT28FW01GABA1x PC-0AAT, MT28FW01GABA1x JS-0AAT Features - Single-level cell (SLC) process technology - Supply voltage - VCC = 2.7- 3.6V (program, erase, read) - VCCQ = 1.65 - VCC (I/O buffers) - Asynchronous random/page read - Page size: 16 words - Page access: 20ns (VCC = VCCQ = 2.7-3.6V) - Random access: 105ns (VCC = VCCQ = 2.7-3.6V) - Random access: 110ns (VCCQ = 1.65-VCC) - Buffer program (512-word program buffer) - 2.0 MB/s (TYP) when using full buffer program - 2.5 MB/s (TYP) when using accelerated buffer program (VHH) - Word program: 25us per word (TYP) - Block erase (128KB): 0.2s (TYP) - Memory organization - Uniform blocks: 128KB or 64KW each - x16 data bus - Program/erase suspend and resume capability - Read from another block during a PROGRAM SUSPEND operation - Read or program another block during an ERASE SUSPEND operation - Unlock bypass,...